13 results
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Multi-Scale Grafted Polymeric Nanostructures Patterned Bottom-Up by Colloidal Lithography and Initiated Chemical Vapor Deposition (iCVD)
- Nathan J. Trujillo, Salmaan H. Baxamusa, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1134 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1134-BB08-27
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- 2008
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Colloidal lithography is a popular, non-conventional process that uses two–dimensional self-assembled monolayer arrays of colloidal nanoparticles as masks for techniques such as etching or sputtering. Initiated Chemical Vapor Deposition (iCVD) is a surface controlled process which offers unprecedented opportunity for producing polymeric layers grafted to substrates with dangling vinyl bonds and patterned through a colloidal template. We demonstrate a generic “bottom-up” process as an inexpensive and simple technique for creating well-ordered arrays of functional patterned polymeric nanostructures. These patterns were produced from thin polymer films of p(butyl acrylate) and p(hydroxyethyl methacrylate), and are robustly tethered to the underlying substrate, as demonstrated by their ability to withstand aggressive solvents. Furthermore, using capillary force lithography, we created topographical templates for large-scale orientation of the nanoparticle assembly. Through this “top-down” approach, for assisting the bottom-up assembly, we present a process for multi-scale patterning of functional polymeric materials, without the need for expensive lithography tools.
Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD
- Qingguo Wu, Mandyam Sriram, Jim Sims, Haiying Fu, Sesha Varadarajan, Tim Archer, Nathan J. Trujillo, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1108 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1108-A09-28
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- 2008
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Thin films of boron carbon nitride (BCN) and boron carbide (BC) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using two different reactant chemistries: (i) N,N’,N” – trimethylborazine (TMB); (ii) dilute diborane (5% in Ar) and hydrocarbon as precursor materials. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Nano-Indentor, Flexus stress instrument and x-ray photoelectron spectroscopy were used to study the deposited films. The BC films are much more stable than BCN films under high humidity (100%) environment. Both BCN and BC films are very stable under atmospheric conditions. A high compressive stress of -4.2 GPA was achieved by conventional PECVD, which show promising applications in high performance ultra large-scale integrated circuit (ULSI) devices.
Mechanical Properties of Organosilicon Thin Films Deposited from Cyclic and Acyclic Precursors using Water as an Oxidant.
- Daniel D. Burkey, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 766 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E6.7
- Print publication:
- 2003
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Pulsed-plasma chemical vapor deposition was used to deposit thin films from four different organosilicon (OSG) precursors, using water as the oxidant. The OSG precursors varied in structure (cyclic or acyclic), chemical composition (siloxane or silane), and type of organic substituent. Significant differences in final film structure were observed based on precursor identity, with the primary result being that cyclic siloxane precursors yielded films with a greater degree of crosslinking. The identity of the organic substituents was shown to affect the crosslinking potential, in that more reactive side groups, such as vinyl groups, facilitated the formation of crosslinking groups. At low power (200 W), film structure was dictated by precursor identity, whereas at high power (400 W), film structure became more uniform and precursor identity was less important. Mechanical properties tracked with plasma power, with low power samples being relatively soft, with hardness values between 0.126 GPa and 0.536 GPa. Samples produced at higher powers are more extensively crosslinked, resulting in enhanced mechanical properties. Samples produced at high powers had hardness values between 0.679 and 3.22 GPa, depending upon precursor identity. Dielectric constants ranged between 2.3 and 4.0.
Pulsed Plasma Enhanced Chemical Vapor Deposition from CH2F2, C2H2F4, and CHCIF2
- Catherine B. Labelle, Kenneth K. S. Lau, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 511 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 75
- Print publication:
- 1998
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Pulsed plasma enhanced chemical vapor deposition films have been grown from C2H2F4, CH2F2, and CHCLF2. C-Is x-ray photoelectron spectroscopy (XPS) indicates a prevalence of C-CF species in the films from C2H2F4 and CH2F2, whereas CF2 species dominate the films from CHC1F2. The CFx species distributions for the films are largely controlled by the competition between CF2-producing and HF elimination reactions in the pulsed plasmas. Dominance by HF elimination produces films with high C-CF and CF concentrations (e.g., CH2F2), whereas dominance by CF2-producing reactions leads to films with higher CF2 concentrations (e.g., CHCIF2). The % CF3 in the film is lowest for the precursor having the lowest F:H ratio, CH2F2. Little or no hydrogen was detected in the deposited films. Thermal degradation of films from C2H2F4 and CH2F2, as probed by solid-state nuclear magnetic resonance (NMR) spectroscopy, shows a loss through CF3 detachment and HF elimination. Pulsed plasma films from all three precursors gave dielectric constants of 2.4, with loss tangents on the order of 10−2. Dielectric measurements of pulsed plasma films from hexafluoropropylene oxide (HFPO) gave a dielectric constant of 2.0 ± 0.1 with a loss tangent of 0.009.
Preliminary Electrical Characterization of Pulsed-Plasma Enhanced Chemical Vapor Deposited Teflon-like Thin Films
- Catherine B. Labelle, Scott J. Limb, Karen K. Gleason, James A. Burns
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- Journal:
- MRS Online Proceedings Library Archive / Volume 443 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 189
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- 1996
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Pulsed-rf excitation of hexafluoropropylene oxide (HFPO) has been used to deposit films with chemical compositions similar to poly(tetrafluoroethylene) (PTFE). Films were deposited at pulse cycles of 10/20, 10/50, 10/200, and 10/400 ms on/ms off and analyzed using electron spin resonance spectroscopy (ESR). All four films produced similar broad ESR spectra, with an average width at maximum slope of ˜60 G and a g-value of 2.0045. The concentration of free electrons in a sample decreased with increasing pulse off time. This behavior can be modeled by the reaction of a free radical with a gas species, assuming that free radicals are generated only during the pulse on time. The films' dielectric constants were found to decrease from 1.99 to 1.95 for pulse off times increasing from 20 to 400 ms.
Mass Transport Effects In Selectively Deposited Diamond Thin Films
- Michael C. Kwan, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 416 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 25
- Print publication:
- 1995
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In order to study the effects of gas phase transport on the growth of hot-filament chemical vapor deposited (HFCVD) diamond, crystallites were selectively grown on a pre-nucleated, oxygen plasma patterned silicon wafer. Growth rate differences across the substrate were observed from scanning electron micrographs. The deposition system was then modeled with a three dimensional finite difference scheme that employed gas phase diffusion of a single growth limiting species from the hot filament to the surface coupled with a first order surface reaction. The variations in the predicted gas phase concentration directly above the surface were adjusted to match the observed growth rate differences through the Dahmk6hler number which was then used to calculate a first order surface reaction coefficient. This value was compared to published reaction coefficients for the abstraction of a surface H-atom by a gas-phase H-atom.
Using Zeolites as Substrates for Diamond Thin Film Deposition
- Michael C. Kwan, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 317 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 523
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- 1993
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Zeolites have been used as a potential substrate for CVD diamond deposition. By saturating the pore channels of a silicalite crystal, which are spaced approximately 10 Å apart, with hydrocarbon seeds to induce and control nucleation, films have been grown in a hot filament chemical vapor deposition (HFCVD) system under standard deposition conditions, using acetone as the carbon source. The hydrocarbons used were adamantane, naphthalene, anthracene, 2,3-benzanthracene, and l,2:5,6-dibenzanthracene. To enhance nucleation, a high pressure pre-deposition period was used initially.
Characterization of these films through electron diffraction and Auger electron spectroscopy indicates that polycrystalline β-SiC imbedded in an amorphous matrix is initially formed and large, well faceted diamond crystals are subsequently nucleated.
Dynamics of Crystalline and Amorphous Polytetrafluoroethylene Studied by Multiple Quantum NMR
- David A. Lathrop, Karen K. Gleason
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- Journal:
- MRS Online Proceedings Library Archive / Volume 321 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 155
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- 1993
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We report a new technique for probing polymer dynamics through the refocussing of multiple quantum (MQ) nuclear magnetic resonance (NMR) coherences. The MQ-NMR experiment follows the correlated behavior of multiple spin-1/2 nuclei interacting through dipolar couplings. Motion which modulates the dipolar coupling strengths on the same time scale as the experiment (∼1 to 20 kHz) alters the intensity of the observed coherences. Temperature dependent 19F data are presented on polytetrafluoroethylene samples of varying crystallinity. For the as-polymerized 98% crystalline PTFE sample, a sharp increase in MQ coherence refocussing occurs, centered at -298 K. The 64% crystalline melt-quenched sample shows a increase at the same temperature but which has a lower intensity. Thus, the ∼298 K peak is most associated with motion in the crystalline phase. This temperature is intermediate between the two first order transition at 293 and 303 K. Oscillations in the refocussed fractions are observed from 208 to 230 K for the 98% crystalline sample, while this ratio is constant over the same temperature range for the 64% crystalline sample. These oscillations may be associated with paracrystalline defects found only in the first sample. Thus, the MQ refocussing experiment is able to clearly differentiate between polymer samples which have different thermal histories. The sharpness of the MQ refocussing features and their variations in magnitude, shape, and sign with temperature are signatures of the molecular level details of the underlying dynamics which produce them.
Nuclear Magnetic Resonance Spectroscopy in the Study of Diamond Thin Films
- Karen Mary McNamara, K. K. Gleason, M. W. Geis
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- Journal:
- MRS Online Proceedings Library Archive / Volume 162 / 1989
- Published online by Cambridge University Press:
- 26 February 2011, 207
- Print publication:
- 1989
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Nuclear magnetic resonance spectroscopy has been used to study diamond thin films grown in a low-pressure hot-filament reactor from 13C-labeled acetone. Film quality is assessed, and the origin of deposited carbon determined. Carbon atoms from both bonding environments in the acetone molecule deposit to form only sp3-bonded material. The relative rate of incorporation of these carbon atoms is determined. Experimental results and equilibrium calculations demonstrate that CO acts as a precursor for diamond growth in the absence of heterogeneous kinetics.
Hydrogen Microstructure in Amorphous Semiconductors.
- Karen K. Gleason, Mark A. Petrich, Jeffrey A. Reimer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 171
- Print publication:
- 1987
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The effects of deposition parameters on the H microstructure of plasma deposited amorphous silicon (a-Si:H) and amorphous silicon carbide (a-SiC:H) are measured via multiple quantum nuclear magnetic resonance (MQ NMR). These studies indicate clusters of 5 to 7H atoms exist in a-Si:H films prepared at temperatures ranging from 113 to 324°C. In the range from 270 to 324°C, only these small clusters exist, but lower temperature films also contain larger clusters. Annealing studies indicate H rearranges in a-Si:H prior to evolution. Deposition temperature and annealing temperature have similar effects on H concentration in a-Si:H, but deposition temperature control the density and microstructure of the film. The addition of dopant atoms also affects the H microstructure, with phosphorous causing larger H clusters to form, and boron reducing clustering in a-Si:H films. This perturbation of the film's microstructure suggests that the effects of dopant addition are more complex in amorphous than in crystalline semiconductors. The concentration of carbon atoms also effects H microstructure of a-SiC:H in a complex way. We surmise that H microstructure, rather than H content, determines amorphous semiconductors properties.
Identification of Chemical Growth Mechanisms in Amorphous Semiconductors
- Jeffrey A. Reimer, Michael J. Mccarthy, Karen K. Gleason, Philip W. Morrison, Jr
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- Journal:
- MRS Online Proceedings Library Archive / Volume 95 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 209
- Print publication:
- 1987
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Experimental and computational results for three classes of experiments are reported. NMR measurements of phosphorus in amorphous hydrogenated silicon indicate that bonding rearrangements in bulk films are possible. Monte Carlo simulations of film growth demonstrate that surface diffusion is the dominant physical phenomenon responsible for the bulk hydrogen content of a-Si:H films. Finally, the gas phase chemistry of silane, as elucidated by our new “diesel” reactor, is considerably more complicated than many authors assume in models for thin films grown from silane.
Multiple Quantum NMR Study of Hydrogen Clustering in Amorphous Silicon
- Karen K. Gleason, J. Baum, A. N. Garroway, A. Pines, J. A. Reimer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 70 / 1986
- Published online by Cambridge University Press:
- 28 February 2011, 83
- Print publication:
- 1986
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Because Multiple Quantum NMR coherences occur only between spins which are coupled together by the dipole interaction, this technique has been used to study the clustering of hydrogen in amorphous silicon. The clustered hydrogen was found to be associated with the broad line of the single quantum NMR spectra. For device quality films, the average cluster size is approximately six protons. The concentration of these five to seven atom defects increases with increasing hydrogen content until, at very high hydrogen content, the clusters are replaced by a continuous network of silicon-hydrogen bonds.